Predicting Silicon Die Breaking Force in Semiconductor Package Assembly through Mechanical Simulation
نویسندگان
چکیده
منابع مشابه
In-process force monitoring for precision grinding semiconductor silicon wafers
Forces generated during precision wafer grinding are small and present challenges for accurate and reliable process monitoring. In this work, these challenges are met by incorporating noncontact displacement sensors into an aerostatic spindle that is calibrated to measure grinding forces from the relative motion between the spindle rotor and stator. This arrangement allows the calculation of gr...
متن کاملSemiconductor Die Bonding
Adhesive die attach materials are suspensions of metal particles in a carrier. The particles are several μm in size, usually in the form of thin flakes of silver. The carrier provides adhesion and cohesion to make a bond with the correct mechanical strength, while the metal particles provide electrical and thermal conductivity. It is noticeable that conductive resins are now often used where no...
متن کاملThree - dimensional Process Simulation for Advanced Silicon Semiconductor Devices
The fabrication of advanced semiconductor dev·ices makes heavy demands on the simulation. The main directions for ongoing research are on the one hand the extension of the simulation tools to three spatial dimensions and on the other hand the development of more sophisticated physical models.
متن کاملAccurate Simulation of Mechanical Stresses in Silicon During Thermal Oxidation
The aim of this paper is to present viscoelastic models to accurately simulate mechanical stresses which result from volume expansion during thermal oxidation or temperature ramps in silicon technology. Comparisons are made with wafer curvature measurements and it is shown that mechanical stresses can explain the "anomalously" fast initial regime during dry oxidation, without involving any addi...
متن کاملSemiconductor Engineering .:. Darker Silicon
As most readers already know, however, there was a limit. Smaller devices with thinner dielectrics and shorter channels are more prone to leakage. Indeed, leakage, negligible for much of the industry’s history and ignored in Dennard’s original paper (http://ieeexplore.ieee.org /xpl/articleDetails.jsp?reload=true&arnumber=4785543), now approaches the same order of magnitude as the circuit’s dyna...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Engineering Research and Reports
سال: 2021
ISSN: 2582-2926
DOI: 10.9734/jerr/2021/v20i517307